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Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*
Solar Energy Materials and Solar Cells, 108, p.263 - 268, 2013/01
Times Cited Count：13 Percentile：49.45(Energy & Fuels)GaAs solar cells which have a PiN structure with 50 self-organized In
Ga
As Quantum Dot (QD) layers were irradiated with 1 MeV electrons up to 1
10
/cm
. After irradiation at 110/cm, the remaining factor of I
, V
and P
for the InGaAs 50 QD solar cell becomes 80, 90 and 55% of the initial values, respectively. On the other hand, those values for non QD GaAs solar cells decrease to 95, 80 and 63% of the initial values, respectively. Since the i-layer for the 50 QD solar cells (1.1 
m) is thicker than the non QD solar cells (660 nm), the larger degradation of I for the 50 QD solar cells than the non QD ones can be interpreted in terms that the carrier recombination in the i-layer for the 50 QD solar cells is larger than that for the non QD solar cells. For V, the 50 QD solar cells showes better radiation resistance than the non QD solar cells. Furthermore, the annealing behavior of the electrical characteristics for the 50 QD and the non QD solar cells was investigated at RT under AM 0 immediately after the irradiation. As a result, the recovery of the electrical characteristics for both solar cells was observed, and the GaAs solar cells shows relatively larger recovery compared to the 50 QD solar cells. Although the mechanism of this recovery has not yet been clarified, the origin of this recovery is thought not to come from the existence of QDs because the GaAs solar cell without QD layers also shows the recovery.
Sato, Shinichiro; Miyamoto, Haruki*; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*; Kawano, Katsuyasu*; Oshima, Takeshi
Solar Energy Materials and Solar Cells, 93(6-7), p.768 - 773, 2009/06
Times Cited Count：75 Percentile：90.65(Energy & Fuels)Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons, the shortcircuit currents (
) and open-circuit voltages (
) are simulated. The damage coefficients of minority carrier diffusion length (
) and the carrier removal rate of base carrier concentration (
) of each subcell are also estimated. The values of and obtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.
and CuIn
Ga
Se by electron spin resonanceOkada, Hiroshi*; Lee, H.-S.*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Kamiya, Tomihiro
Solar Energy Materials and Solar Cells, 90(1), p.93 - 99, 2006/01
Times Cited Count：4 Percentile：20.61(Energy & Fuels)no abstracts in English
thin filmsTanaka, Toru*; Yamaguchi, Toshiyuki*; Oshima, Takeshi; Ito, Hisayoshi; Wakahara, Akihiro*; Yoshida, Akira*
Solar Energy Materials and Solar Cells, 75(1-2), p.109 - 113, 2003/01
Times Cited Count：17 Percentile：55.67(Energy & Fuels)Single crystalline CuInSe thin films grown on GaAs were implanted with Cl ions at room temperature. The mean concentration of Cl ranges from 5E17 to 5E19 /cm
. Residual defects introduced in implantated layer are removed by annealing at 400
C in N. As a result of Hall effects measuremant, electron concentration in implanted layer increases with increasing implanted Cl concentration. This result suggests that Cl acts as donor in CuLnSe. Ionizing energy of Cl is estimated to be 78 meV from the temperature dependence of electron concentation.
/p InGaP solar cellDharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Solar Energy Materials and Solar Cells, 75(1-2), p.327 - 333, 2003/01
Times Cited Count：3 Percentile：30.01(Energy & Fuels)n/p InGaP junctions were irradiated with 100keV-protons, and the effect on their electrical properties were studied using C-V and DLTS methods.The n/p InGaP junctions were fabricated by MOCVD method.They were irradiated up to 1E12 /cm at RT. The carrier removal rate was estimated to be 6.1E4 cm
from the fluence dependence of carrier concentration. H1 peaks which were observed at 400 K in DLTS measurements were found after irradiation.It was concluded that H1 peaks relates residual defects which act as carrier removal centers.
